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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and inverters. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP. 0.23 14 50 MAX. 700 700 400 1.0 2.0 6 1.0 20 70 UNIT V V V A A W V ns Tsp 25 C IC = 0.75 A;IB = 150 mA IC = 0.75 A;VCE = 5 V IC = 1.0 A,IBON=200 mA PINNING - SOT223 PIN 1 2 3 4 base collector emitter collector (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 1.0 2.0 0.5 1.0 6 150 150 UNIT V V V A A A A W C C Tsp 25 C THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-a PARAMETER Junction to solder point Junction to ambient pcb mounted pad areas as in Fig. 23) pcb mounted, minimum footprint Mounted on 50x34x2mm aluminium PCB CONDITIONS TYP. MAX. 20 UNIT K/W 70 30 - K/W K/W September 1999 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT STATIC CHARACTERISTICS Tsp = 25 C unless otherwise specified SYMBOL ICES,ICBO ICES ICEO IEBO VCEOsust VCEsat VBEsat hFE hFE hFE PARAMETER Collector cut-off current 1 Collector cut-off current Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VCE = VCESMmax(400V) VEB = 9 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 0.75 A; IB = 0.15mA IC = 0.75 A; IB = 0.15mA IC = 10mA; VCE = 5 V IC = 100mA; VCE = 5 V IC = 0.75A; VCE = 5 V MIN. 400 11 12.5 9 TYP. 2.5 15 0.02 0.23 0.95 20 21 14 MAX. 100 500 100 100 1.0 1.3 27 31 20 UNIT A A A A V V V DYNAMIC CHARACTERISTICS Tsp = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load) ton ts tf Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) Turn-off storage time Turn-off fall time CONDITIONS ICon = 1.0 A; IBon = -IBoff = 200mA; RL = 75 ohms; VBB2 = 4 V; TYP. MAX. UNIT s s ns s ns s ns 0.65 0.88 250 0.88 1.2 338 ICon = 1.0 A; IBon = 200mA; LB = 1 H; -VBB = 5 V ICon = 1.0 A; IBon = 200mA; LB = 1 H; -VBB = 5 V; Tj = 100 C 0.51 50 0.7 70 - 1.4 130 1 Measured with half sine-wave voltage (curve tracer). September 1999 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT + 50v 100-200R ! 100 Zth / (K/W) 10 0.5 0.2 0.1 0.05 0.02 P D tp Horizontal Oscilloscope Vertical 0.1 1 D= tp T t 300R 30-60 Hz 6V 1R 0.01 D=0 T 10u 100u 1m 10m 100m t/s 1 Fig.1. Test circuit for VCEOsust. 1u 10 100 Fig.4. Transient thermal impedance. Zth j-lead = f(t); parameter D = tp/T IC / mA HFE 30 125 C 20 15 -40 C 10 25 C 250 VCE = 1V 5 100 10 0 VCE / V min VCEOsust Fig.2. Oscilloscope display for VCEOsust. 1 0.001 0.01 0.1 IC/A 1 2 3 5 Fig.5. Typical DC current gain. hFE = f(IC) parameter VCE PD% Normalised Power Derating HFE 30 120 110 100 90 80 70 60 50 40 30 20 10 0 125 C -40 C 25 C 10 VCE = 5V 0 20 40 60 80 100 Tmb / C 120 140 1 0.001 0.01 0.1 IC/A 1 2 3 5 Fig.3. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb) Fig.6. Typical DC current gain. hFE = f(IC) parameter VCE September 1999 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT VCEsat VOLTAGE/V 2 VBEsat VOLTAGE/V 1.5 1.4 1.3 1.5 IC/IB = 3 125 C 1.2 1.1 1 IC/IB = 3 1 -40 C 25 C 0.9 25 C 0.8 0.5 0.7 125 C 0.6 -40 C 0 0.01 0.1 IC, COLLECTOR CURRENT/A 1 2 0.5 0.01 0.1 IC, COLLECTOR CURRENT/A 1 2 Fig.7. Collector-Emitter saturation voltage. Solid Lines = typ values, IC/IB = 3 Fig.8. Base-Emitter saturation voltage. Solid Lines = typ values, IC/IB = 3 INDUCTIVE SWITCHING VCC ICon 90 % IC LC 10 % IBon ts tf t LB T.U.T. IB toff IBon t -IBoff -VBB Fig.9. Test circuit inductive load. VCC = 300 V; -VBE = 5 V, LC = 200 H; LB = 1 H tfi (ns) 275 250 225 200 175 150 125 100 75 50 25 0 2 4 6 HFE GAIN (IC/IB) 8 10 11 IC = 1A IC = 1.5A IC = 2A Fig.10. Switching times waveforms with inductive load. tfi (ns) 275 250 225 200 175 150 125 100 75 50 25 0 0.8 1 1.2 1.4 1.6 IC COLLECTOR CURRENT /A 1.8 2 2.2 IC/IB = 5 IC/IB =3 IC/IB = 10 Fig.11. Inductive switching. tfi = f(hFE) September 1999 4 Fig.12. Inductive switching. tfi = f(IC) Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT tsi (us) 1.25 tsi (us) 1.25 1 IC = 2A 1 IC = 1.5A 0.75 0.75 IC/IB = 3 IC/IB = 5 0.5 IC = 1A 0.5 0.25 0.25 IC/IB = 10 0 2 4 6 HFE GAIN (IC/IB) 8 10 11 0 0.8 1 1.2 1.4 1.6 IC COLLECTOR CURRENT /A 1.8 2 2.2 Fig.13. Inductive switching. tsi = f(hFE) Fig.14. Inductive switching. tsi = f(IC) RESISTIVE SWITCHING VCC 90 % ICon 90 % IC RL VIM 0 tp T ts 10 % ton tf IBon 10 % tr 30ns -IBoff RB T.U.T. IB toff Fig.15. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. ton (us) 2 Fig.16. Switching times waveforms with resistive load. ts (us) 3 IC/IB = 10 2.5 1.5 2 IC/IB = 5 1 IC/IB = 5 1.5 IC/IB = 3 1 0.5 IC/IB = 3 0.5 IC/IB = 10 0 0 0.5 1 1.5 2 0 0 0.5 1 1.5 2 2.5 IC COLLECTOR CURRENT (A) IC COLLECTOR CURRENT (A) Fig.17. Resistive switching. ton = f(IC) September 1999 5 Fig.18. Resistive switching. ts = f(IC) Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT tf (ns) 5,000 2,000 1,000 IC/IB = 5 IC/IB = 3 IC/IB = 10 100 50 0 0.5 1 1.5 IC COLLECTOR CURRENT (A) 2 Fig.19. Resistive switching. tf = f(IC) VCC IC/A 2.5 2.25 2 1.75 LC VCL(RBSOAR) 1.5 1.25 IBon PROBE POINT LB T.U.T. 1 0.75 0.5 -9V -5V -3V -1V -VBB 0.25 0 0 100 200 300 400 500 600 700 800 VCEclamp/V Fig.20. Test Circuit for the RBSOA test. Vcl 700V; Vcc = 150V; LB = 1H; Lc = 200H Fig.21. Reverse bias safe operating area Tj Tjmax for -VBE = 9V, 5V,3V & 1V September 1999 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT MOUNTING INSTRUCTIONS Dimensions in mm. 3.8 min 1.5 min 2.3 1.5 min (3x) 6.3 1.5 min 4.6 Fig.22. soldering pattern for surface mounting SOT223. PRINTED CIRCUIT BOARD Dimensions in mm. 36 18 60 9 4.6 4.5 10 7 15 50 Fig.23. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick). September 1999 7 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT MECHANICAL DATA Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 96-11-11 97-02-28 Fig.24. SOT223 surface mounting package. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to Discrete Semiconductor Packages, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". September 1999 8 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1999 9 Rev 1.000 |
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